14N06L Просмотр технического описания (PDF) - Harris Semiconductor
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производитель
14N06L
Harris Semiconductor
14N06L Datasheet PDF : 11 Pages
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Specifications RFD14N06L, RFD14N06LSM, RFP14N06L
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
tD(ON)
tR
tD(OFF)
tF
tOFF
QG(TOT)
QG(5)
QG(TH)
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = 60V,
VGS = 0V
TC = +25oC
TC = +150oC
VGS = ±10V
ID = 14A, VGS = 5V
VDD = 30V, ID = 7A,
RL = 4.28Ω, VGS = 5V,
RGS = 0.6Ω
VGS = 0V to 10V
VGS = 0V to 5V
VDD = 48V,
ID = 14A,
RL = 3.43Ω
VGS = 0V to 1V
VDS = 25V, VGS = 0V,
f = 1MHz
TO-251 and TO-252
TO-220
MIN
TYP MAX UNITS
60
-
-
V
1
-
2
V
-
-
1
µA
-
-
50
µA
-
-
100
nA
-
-
0.100
Ω
-
-
60
ns
-
13
-
ns
-
24
-
ns
-
42
-
ns
-
16
-
ns
-
-
100
ns
-
-
40
nC
-
-
25
nC
-
-
1.5
nC
-
670
-
pF
-
185
-
pF
-
50
-
pF
-
-
3.125 oC/W
-
-
100
oC/W
-
-
80
oC/W
Source-Drain Diode Ratings and Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
Forward Voltage
Reverse Recovery Time
VSD
ISD = 14A
tRR
ISD = 14A, dISD/dt = 100A/µs
MIN
TYP MAX UNITS
-
-
1.5
V
-
-
125
ns
2
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