SI3456DV(1998) Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
SI3456DV Datasheet PDF : 4 Pages
| |||
Si3456DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
VGS = 10, 9, 8, 7, 6, 5 V
16
16
4V
12
12
Transfer Characteristics
8
4
3V
0
0
1
2
3
4
5
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.10
0.08
0.06
0.04
VGS = 4.5 V
VGS = 10 V
0.02
0
0
4
8
12
16
20
ID – Drain Current (A)
Gate Charge
10
VDS = 15 V
ID = 5.1 A
8
6
4
2
0
0
3
6
9
12
Qg – Total Gate Charge (nC)
8
4
0
0
1000
800
TC = 125_C
25_C
–55_C
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
Capacitance
Ciss
600
400
Coss
200
Crss
0
0
6
12
18
24
30
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.60
1.45
VGS = 10 V
ID = 5.1 A
1.30
1.15
1.00
0.85
0.7
–50 –25 0
25 50 75 100 125 150
TJ – Junction Temperature (_C)
Document Number: 70659
S-56945—Rev. B, 23-Nov-98
www.vishay.com S FaxBack 408-970-5600
2-3
Share Link: 