DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

H2N5366 Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics

Номер в каталоге
Компоненты Описание
производитель
H2N5366
Hi-Sincerity
Hi-Sincerity Microelectronics 
H2N5366 Datasheet PDF : 3 Pages
1 2 3
HI-SINCERITY
MICROELECTRONICS CORP.
H2N5366
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2N5366 is designed for general purpose applications requiring
high breakdown voltages.
Spec. No. : HE6275-A
Issued Date : 1999.02.01
Revised Date : 2000.09.15
Page No. : 1/3
Features
This device was designed for use as general purpose amplifier and switches.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 400 mW
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -40 V
VCEO Collector to Emitter Voltage .................................................................................... -40 V
VEBO Emitter to Base Voltage ............................................................................................ -4 V
IC Collector Current ...................................................................................................... -500 mA
Characteristics (Ta=25°C)
Symbol
Min. Typ.
BVCBO
-40
-
BVCEO
-40
-
BVEBO
-4
-
ICBO
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(sat)1
-
-
*VBE(sat)2
-
-
*hFE1
80
-
*hFE2
100
-
*hFE3
40
-
fT
-
-
Cob
-
-
Max.
-
-
-
-100
-100
-250
-1
-1.1
-2
-
-
-
-
10
Unit
Test Conditions
V
V
V
nA
nA
mV
V
V
V
MHz
PF
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-45V, IE=0
VEB=-3V. IC=0
IC=-50mA, IB=-5mA
IC=-300mA, IB=-30mA
IC=-50mA, IB=-5mA
IC=-300mA, IB=-30mA
VCE=-1V, IC=-2mA
VCE=-1V, IC=-50mA
VCE=-5V, IC=-300mA
VCE=-10V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width 380us, Duty Cycle2%
HSMC Product Specification

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]