TGA8810-SCC
DC CHARACTERISTICS
PARAMETER
I D = I D1+ I D2 Total positive supply current
TA = 25°C
TEST CONDITIONS
VD1 = V D2 = 5 V
TYP UNIT
90 mA
EQUIVALENT SCHEMATIC
Bond Pad #2
V
D1
Bond Pad #3
RF Input
FET 1
500 m
V
D2
RF Output
FET 2
500 m
0.1 pF
C
1
C
2
0.2 pF
5
5
9
9
6
R RR
S12 S13 S11
6
R RR
S21 S23 S22
RS11, RS12, RS13, RS21, RS22, and RS23 provide the flexibility of selecting bias cur rent and RF per formance. C1 and
C2 can be used in tuning for impr oved input match. For best r esults, use the assembly configuration shown in
the “Recommended Assembly Diagram” on page 6.
5
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com