SI2328DS(2001) Просмотр технического описания (PDF) - Vishay Semiconductors
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SI2328DS Datasheet PDF : 4 Pages
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Si2328DS
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
12
0.3
10
ID = 250 mA
0.0
8
–0.3
6
–0.6
4
–0.9
2
–1.2
–50 –25
0 25 50 75 100 125 150
TJ – Temperature (_C)
0
0.01
Single Pulse Power
TA = 25_C
0.1
1
10
Time (sec)
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10–4
Single Pulse
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 176_C/W
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71796
S-05372—Rev. A, 25-Dec-01
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