SKD 146/16-L140
Fig. 1 Power dissipation per module vs. output current
Fig. 2 Surge overload current vs. time
Fig. 3 Forward characteristic of single rectifier diode
Fig. 4 Temperature sensor characteristic
Fig. 5 Typ. gate charge characteristic
2
Fig. 6 Output IGBT characteristic Ic=f(Vce), Tj=25°C
05-09-2007 DIL
© by SEMIKRON