SFH216 Просмотр технического описания (PDF) - Siemens AG

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SFH216

Silicon PIN Photodiode with Very Short Switching Time

Siemens AG 

SFH 216

Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K)

Characteristics (TA = 25 °C, standard light A, T = 2856 K)

Bezeichnung

Description

Symbol

Symbol

Spektrale Fotoempfindlichkeit, λ = 850 nm Sλ

Spectral sensitivity

Quantenausbeute, λ = 850 nm

η

Quantum yield

Leerlaufspannung, Ev = 1000 Ix

VO

Open-circuit voltage

Kurzschlußstrom, Ev = 1000 Ix

ISC

Short-circuit current

Anstiegs und Abfallzeit des Fotostromes

tr, tf

Rise and fall time of the photocurrent

RL = 50 Ω; VR = 20 V; λ = 850 nm; Ip = 800 µA

Durchlaßspannung, IF = 100 mA, E = 0

VF

Forward voltage

Kapazität, VR = 0 V, f = 1 MHz, E = 0

C0

Capacitance

Temperaturkoeffizient von VO

Temperature coefficient of VO

Temperaturkoeffizient von ISC

Temperature coefficient of ISC

Rauschäquivalente Strahlungsleistung

Noise equivalent power

VR = 20 V, λ = 850 nm

Nachweisgrenze, VR = 20 V, λ = 850 nm

Detection limit

TCV

TCI

NEP

D*

Wert

Value

0.55

0.80

410 (≥ 350)

50

5

Einheit

Unit

A/W

Electrons

Photon

mV

µA

ns

1.3

11

– 2.6

0.2

3.3 × 10–14

3.1 × 1012

V

pF

mV/K

%/K

W

√Hz

cm · √Hz

W

Semiconductor Group

412

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