DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

TM60SA-6 Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC

Номер в каталоге
Компоненты Описание
производитель
TM60SA-6 Datasheet PDF : 4 Pages
1 2 3 4
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
10 3
7
5
Tj=150°C
3
2
10 2
7
5
3
2
10 1
7
5
3
2
10 0
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
ON-STATE VOLTAGE (V)
GATE CHARACTERISTICS
4
3
2 VFGM=10V
10 1
7
5 VGT=3.0V
PGM=5.0W
3
2
PG(AV)=
0.50W
10 0
IGT=
100mA
7
5
3 Tj=25°C
2
10 –1
VGD=0.25V
7
5
410 1 2 3 5 710 2 2 3 5 7 10 3 2 3 5 7 10 4
GATE CURRENT (mA)
MAXIMUM AVERAGE ON-STAGE
POWER DISSIPATION
80 (SINGLE PHASE HALFWAVE)
70
180°
60
120°
90°
50
60°
θ=30°
40
θ
30
360°
20
RESISTIVE,
INDUCTIVE LOAD
10
PER SINGLE
0
ELEMENT
0 10 20 30 40 50 60 70 80
AVERAGE ON-STATE CURRENT (A)
MITSUBISHI THYRISTOR MODULES
TM60SA-6
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
2000
1600
1200
800
400
0
1 2 3 5 7 10 20 30 50 70100
CONDUCTION TIME
(CYCLE AT 60Hz)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
10 0 2 3 5 710 1
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
10 –3 2 3 5 710 –2 2 3 5 710 –1 2 3 5 7 10 0
TIME (s)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
150 (SINGLE PHASE HALFWAVE)
RESISTIVE,
140
θ
130
360°
INDUCTIVE LOAD
PER SINGLE
ELEMENT
120
110
100
90
120°
θ=30° 60° 90° 180°
80
70
0 10 20 30 40 50 60 70 80
AVERAGE ON-STATE CURRENT (A)
Feb.1999

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]