2N5873 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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Компоненты Описание

производитель

2N5873

Silicon NPN Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistors

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A

VBE(sat) Base-Emitter Saturation Voltage

IC= 7A; IB= 1.4A

ICEO

Collector Cutoff Current

VCE= 30V; IB= 0

ICBO

Collector Cutoff Current

VCB= 60V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE-1

DC Current Gain

IC= 2.5A; VCE= 4V

hFE-2

DC Current Gain

IC= 7A; VCE= 4V

fT

Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V; ftest= 1.0MHz

2N5873

MIN MAX UNIT

60

V

1.0

V

3.0

V

2.5

V

2.0

mA

1.0

mA

1.0

mA

20

100

4

4

MHz

SPTECH website：www.superic-tech.com

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