2N6254 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N6254 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-hFE= 20-70@IC = 5A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.5V(Max)@IC = 5A
APPLICATIONS
·Series and shunt regulators
·High-fidelity amplifiers
·Power-switching circuits
·Solenoid drivers
·Low-frequency inverters
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCER
Collector-Emitter Voltage RBE= 100Ω
85
V
VCEO
Collector-Emitter Voltage
80
V
VCEV
Collector-Emitter Voltage VBE= -1.5V
90
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
IB
Base Current
7
A
PC
Collector Power Dissipation@TC=25℃ 150
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.17
UNIT
℃/W
SPTECH website：www.superic-tech.com
2N6254
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