2N6283 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Номер в каталоге

Компоненты Описание

производитель

2N6283

Silicon NPN Darlingtion Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Darlingtion Power Transistor

2N6283

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 40mA

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 200mA

VBE(sat) Base-Emitter Saturation voltage

IC= 20A; IB= 200mA

VBE(on) Base-Emitter On voltage

IC= 10A ; VCE= 3V

ICEO

Collector Cutoff current

VCE= 40V; IB=0

IEBO

Emitter Cut-off current

VEB= 5V; IC= 0

hFE-1

DC Current Gain

IC= 10A ; VCE= 3V

hFE-2

DC Current Gain

IC= 20A ; VCE= 3V

COB

Output Capacitance

IE=0 ; VCB= 10V;ftest= 1.0MHz

MIN MAX UNIT

80

V

2.0

V

3.0

V

4.0

V

2.8

V

1.0

mA

2.0

mA

750 18000

100

400

pF

SPTECH website：www.superic-tech.com

2

Share Link: