2N6036 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

2N6036

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2N6034 2N6035 2N6036

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

2N6034

-40

VCEO(SUS)

Collector-emitter

sustaining voltage

2N6035 IC=-0.1A ;IB=0

-60

V

2N6036

-80

VCEsat-1 Collector-emitter saturation voltage IC=-2A; IB=-8mA

-2.0

V

VCEsat-2 Collector-emitter saturation voltage IC=-4A; IB=-40mA

-3.0

V

VBEsat Base-emitter saturation voltage

VBE

Base-emitter on voltage

ICEO

Collector cut-off current

ICEX

Collector cut-off current

ICBO

Collector cut-off current

IC=-4A; IB=-40mA

IC=-2A ; VCE=-3V

VCE=Rated VCEO; IB=0

VCE=Rated VCEO; VBE(off)=1.5V

TC=125℃

VCB=Rated VCBO; IE=0

-4.0

V

-2.8

V

-0.1 mA

-0.1

-0.5

mA

-0.1 mA

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-2.0 mA

hFE-1

DC current gain

hFE-2

DC current gain

hFE-3

DC current gain

COB

Output capacitance

IC=-0.5A ; VCE=-3V

500

IC=-2A ; VCE=-3V

750

IC=-4A ; VCE=-3V

100

IE=0;VCB=-10V;f=0.1MHz

15000

200

pF

2

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