2N5599 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N5599 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon PNP Power Transistors
DESCRIPTION
·DC Current Gain-
: hFE= 30-90@IC= -1A
·Wide Area of Safe Operation
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -80V(Min)
·Complement to Type 2N5600
APPLICATIONS
·Designed for use in high frequency power amplifiers, audio
power amplifier and drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
PC
Collector Power Dissipation@TC=25℃
20
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
4.37 ℃/W
SPTECH website：www.superic-tech.com
2N5599
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