BCX54 Просмотр технического описания (PDF) - Bruckewell Technology LTD

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BCX54

NPN Silicon AF Transistors

Bruckewell Technology LTD 

NPN Silicon AF Transistors

BCX54/BCX55/BCX56

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN MAX

Collector-base breakdown voltage

Collector-emitter breakdown voltage

V(BR)CBO

V(BR)CEO

IC=100μA IB=0

IC=10mA IB=0

BCX54 45

BCX55 60

BCX56 100

BCX54 45

BCX55 60

BCX56 80

UNIT

V

V

Emitter-base breakdown voltage

V(BR)EBO IE=10μA IC=0

5

V

Collector cut-off current

DC current gain

VCB=30V IE=0

ICBO

VCB=30V IE=0,TA=150℃

100 nA

20 μA

VCE=2V IC=5mA

hFE

VCE=2V IC=150mA

VCE=2V IC=500mA

25

40 250

25

Collector-emitter saturation voltage VCE(sat) IC=500mA IB=50mA

0.5 V

Base-emitter voltage

VBE

IC=500mA ,VCE=2V

1V

Transition frequency

fT

VCE=10V, IC=50mA,

100

f=20MHz

MHz

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

2

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