TIP105 Просмотр технического описания (PDF) - Comset Semiconductors

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TIP105

SILICON DARLINGTON POWER TRANSISTORS

Comset Semiconductors 

SEMICONDUCTORS

PNP TIP105-106-107

SILICON DARLINGTON POWER TRANSISTORS

PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220

enveloppe. They are designed for general purpose amplifier and low-speed switching

applications.

NPN complements are TIP100-101-102

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current

ICM

Collector Peak Current

IB

Base Current

@ Tc < 25°

PT

Power Dissipation

@ Ta < 25°

TJ

Junction Temperature

Ts

Storage Temperature range

Value

TIP105

TIP106

TIP107

TIP105

TIP106

TIP107

TIP105

TIP106

TIP107

TIP105

TIP106

TIP107

TIP105

TIP106

TIP107

TIP105

TIP106

TIP107

TIP105

TIP106

TIP107

TIP105

TIP106

TIP107

TIP105

TIP106

TIP107

TIP105

TIP106

TIP107

-60

-80

-100

-60

-80

-100

-5

-8

-15

-1

80

2

150

-65 to +150

Unit

V

V

V

A

A

A

Watts

°C

04/10/2012

COMSET SEMICONDUCTORS

1|3

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