MITSUBISHI Nch POWER MOSFET
FS5AS-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 60V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 2A, VGS = 10V
ID = 2A, VGS = 10V
ID = 2A, VDS = 5V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 30V, ID = 2A, VGS = 10V, RGEN = RGS = 50Ω
IS = 2A, VGS = 0V
Channel to case
IS = 5A, dis/dt = –100A/µs
Limits
Unit
Min.
Typ. Max.
60
—
—
V
—
—
±0.1
µA
—
—
0.1
mA
2.0
3.0
4.0
V
—
0.12 0.16
Ω
—
0.24 0.32
V
—
4.0
—
S
—
280
—
pF
—
120
—
pF
—
35
—
pF
—
15
—
ns
—
8
—
ns
—
18
—
ns
—
9
—
ns
—
1.0
1.5
V
—
—
6.25 °C/W
—
45
—
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
40
32
24
16
8
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V
20
10V
8V
16
PD = 20W
7V
12
Tc = 25°C
Pulse Test
8
6V
4
5V
0
0 1.0 2.0 3.0 4.0 5.0
DRAIN-SOURCE VOLTAGE VDS (V)
MAXIMUM SAFE OPERATING AREA
2
tw = 10ms
101
7
5
3
100ms
2
100
1ms
7
5
DC 10ms
3
2
10–1
7
5 TC = 25°C
3 Single Pulse
2
2 3 5 7 100 2 3
5 7 101 2 3
5 7 102 2
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V 10V 8V 7V
10
Tc = 25°C
Pulse Test
8
6V
6
4
5V
2
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999