1N60 Просмотр технического описания (PDF) - Thinki Semiconductor Co., Ltd.

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производитель

1N60

Hermetically Sealed Glass Case Point Contact Germanium Diode

Thinki Semiconductor Co., Ltd. 

1N60/1N60P

FIG.1-FORWARD CURRENT VERSUS FORWARD

VALTAGE(TYPICAL VALUES)

IF(mA)

500

450

400

350

300

250

200

150

100

50

0

0.2

0.4 0.6

0.8

1.0 VF(V)

FIG.2-REVERSE CURRENT VERSUS CONTINUOUS

REVERSE VOLTAGE

IR(UA)

0.70

0.60

0.50

0.40

0.30

0.20

0.10

0

5

10

15

20

25

30 VR(V)

FIG.3-JUNCTION CAPACITANCE VERSUS CONTINUOUS

REVERSE APPLIED VOLTAGE

C(pF)

20

18

16

14

12

10

8

6

0

1

2

3

4

5

6 VR(V)

FIG.4-DETECTION EFFICIENCY MEASUREMENT

CIRCUIT

D.U.T.

Input:3VRMS

CL

10pF

output

RL

3.8kW

Rev.09T

© 1995 Thinki Semiconductor Co., Ltd.

Page 2/2

http://www.thinkisemi.com.tw/

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