DS2016R Просмотр технического описания (PDF) - Maxim Integrated

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DS2016R

2k x 8 3V/5V Operation Static RAM

Maxim Integrated 

DS2016

TIMING DIAGRAM: DATA RETENTION - POWER-UP, POWER-DOWN Figure 1

SEE NOTE 8

NOTES:

1) WE is high for read cycles.

2) OE = VIH or VIL. If OE = VIH during write cycle, the output buffers remain in a high impedance state.

3) tWP is specified as the logical AND of CE and WE . tWP is measured from the latter of CE or WE

going low to the earlier of CE or WE going high.

4) tDH and tDS are measured from the earlier of CE or WE going high.

5) If the CE low transition occurs simultaneously with or later than the WE low transition, the output

buffers remain in a high impedance state.

6) If the CE high transition occurs prior to or simultaneously with the WE high transition, the output

buffers remain in a high impedance state.

7) If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,

the output buffers remain in a high impedance state.

8) If the VIH level of CE is 2.0V during the period that VCC voltage is going down from 4.5V to 2.7V,

ICCS1 current flows.

9) The DS2016 maintains full operation from 5.5V to 2.7V. The electrical characteristics tables show

two tested and guaranteed points of operation. For operation between 4.5V and 3.5V, use the

composite worst case characteristics from both 5V and 3V operation for design purposes.

DC TEST CONDITIONS

Outputs Open

All voltages are referenced to ground.

AC TEST CONDITIONS

Output Load: 100pF + 1TTL Gate

Input Pulse Levels: 0V - 3.0V

Timing Measurement Reference Levels

Input: 1.5V

Output: 1.5V

Input Pulse Rise and Fall Times: 5ns

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