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M54585KP Просмотр технического описания (PDF) - Powerex

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M54585KP Datasheet PDF : 4 Pages
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POWEREX
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54585KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
M54585KP is eight-circuit Darlington transistor arrays with
clamping diodes. The circuits are made of NPN transistors.
Both the semiconductor integrated circuits perform high-cur-
rent driving with extremely low input-current supply.
FEATURES
q High breakdown voltage (BVCEO 50V)
q High-current driving (IC(max) = 500mA)
q With clamping diodes
q Driving available with TTL output or with PMOS IC output
q With shrink small outline package
PIN CONFIGURATION
NC 1
20 NC
IN12
IN23
19 O1
18 O2
IN34
17 O3
INPUT
IN45
IN56
IN67
16 O4
15 O5
14 O6
OUTPUT
IN78
13 O7
IN8 9
12 O8
GND 10
11 COM COMMON
NC : No connection
Package type 20P2E-A
CIRCUIT DIAGRAM
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments such as LEDs and lamps, and MOS-bipolar logic IC
interfaces
2.7k
INPUT
7.2k
COM
OUTPUT
FUNCTION
The M54585KP has eight circuits, which are NPN Darlington
transistors. Input transistors have resistance of 2.7kbe-
tween the base and input pin. A spike-killer clamping diode
is provided between each output pin and GND. Output tran-
sistor emitters are all connected to the GND pin.
Collector current is 500mA maximum. The maximum collec-
tor-emitter voltage is 50V.
3k
GND
The eight circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Parameter
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Ratings
–0.5 ~ +50
500
–0.5 ~ +30
500
50
0.68
–20 ~ +75
–55 ~ +125
Unit
V
mA
V
mA
V
W
°C
°C
Jan. 2000

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