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ISL6446A Просмотр технического описания (PDF) - Renesas Electronics

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ISL6446A Datasheet PDF : 22 Pages
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ISL6446A
Figure 29 shows the circuit traces that require additional layout
consideration. Use single point and ground plane construction for
the circuits shown. Locate the RT resistor as close as possible to
the RT pin and the SGND pin. Provide a decoupling capacitor
CVCC between the VCC and PGND pins and place it as close to
VCC and PGND pins as possible shown in Figure 30.
FIGURE 30. CVCC PLACEMENT RECOMMENDATION
For each switcher, minimize any leakage current paths on the
SS/EN pin and locate the capacitor, CSS close to the SS/EN pin
because the internal current source is only 30µA. All of the
compensation network components for each switcher should be
located near the associated COMP and FB pins. Locate the
capacitor, CBOOT as close as practical to the BOOT and PHASE
pins (but keep the noisy PHASE plane away from the IC (except
for the PHASE pin connection).
The OCSET circuits (see Figure 4 on page 6) should have a
separate trace from the upper FET to the OCSET R and C; that will
more accurately sense the VIN at the FET than just tying them to
the VIN plane. The OCSET R and C should be placed near the IC
pins.
FN8384 Rev 3.00
Aug 27, 2015
Page 20 of 22

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