IPG20N06S4-15A Просмотр технического описания (PDF) - Infineon Technologies
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IPG20N06S4-15A Datasheet PDF : 9 Pages
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13 Avalanche energy4)
E AS = f(T j), I D = 10A
100
IPG20N06S4-15A
14 Drain-source breakdown voltage
V BR(DSS) = f(T j); I D = 1 mA
65
80
63
60
61
40
59
20
57
0
25
50
75 100 125 150 175
Tj [°C]
55
-60 -20
20
60 100 140 180
Tj [°C]
15 Typ. gate charge4)
V GS = f(Q gate); I D = 20 A pulsed
parameter: V DD
16 Gate charge waveforms
12
V GS
10
12 V
Qg
48 V
8
6
V g s(th)
4
2
0
0
Rev. 1.0
5
10
15
20
25
Qgate [nC]
Q g (th)
Q gs
page 7
Q sw
Q gd
Q gate
2015-09-17
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