BT138B-600 Просмотр технического описания (PDF) - WeEn Semiconductors
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BT138B-600 Datasheet PDF : 13 Pages
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WeEn Semiconductors
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
IGT
gate trigger current
IL
latching current
IH
holding current
VT
on-state voltage
VGT
gate trigger voltage
ID
off-state current
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
Conditions
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 15 A; Tj = 25 °C; Fig. 10
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
VD = 600 V; Tj = 125 °C
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
BT138B-600
4Q Triac
Min Typ Max Unit
-
5
35
mA
-
8
35
mA
-
10
35
mA
-
22
70
mA
-
7
40
mA
-
20
60
mA
-
8
40
mA
-
10
60
mA
-
6
30
mA
-
1.4 1.65 V
-
0.7 1
V
0.25 0.4 -
V
-
0.1 0.5 mA
100 250 -
V/µs
BT138B-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
23 July 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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