BYW29E-150 Просмотр технического описания (PDF) - NXP Semiconductors.
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BYW29E-150 Datasheet PDF : 8 Pages
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1;3 Semiconductors
Rectifier diodes
ultrafast, rugged
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
in free air
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
VF
Forward voltage
IF = 8 A; Tj = 150˚C
IF = 8 A
IF = 20 A
IR
Reverse current
VR = VRWM
VR = VRWM; Tj = 100˚C
Qrr
Reverse recovered charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/μs
trr1
Reverse recovery time
IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/μs
trr2
Reverse recovery time
IF = 0.5 A to IR = 1 A; Irec = 0.25 A
Vfr
Forward recovery voltage IF = 1 A; dIF/dt = 10 A/μs
Product specification
BYW29E series
MIN. TYP. MAX. UNIT
-
- 2.7 K/W
- 60 - K/W
MIN.
-
-
-
-
-
-
-
-
TYP.
0.8
0.92
1.1
2
0.2
4
20
15
1
MAX.
0.895
1.05
1.3
10
0.6
11
25
20
-
UNIT
V
V
V
μA
mA
nC
ns
ns
V
August 2001
2
Rev 1.400
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