B1344 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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производитель

B1344

Silicon PNP Darlington Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Darlington Power Transistor

2SB1344

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -100V(Min)

·High DC Current Gain-

: hFE= 1000(Min)@ (VCE= -3V, IC= -2A)

·Complement to Type 2SD2025

APPLICATIONS

·Designed for power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-8

A

ICM

Collector Current-Peak

Collector Power Dissipation

@Ta=25℃

PC

Collector Power Dissipation

@TC=25℃

TJ

Junction Temperature

-10

A

2

W

30

150

℃

Tstg

Storage Temperature

-55~150 ℃

SPTECH website：www.superic-tech.com

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