2SD905 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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Компоненты Описание

производитель

2SD905

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 1mA; IC= 0

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞

VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.5A

VBE(sat) Base-Emitter Saturation Voltage

IC= 8A; IB= 1.5A

ICES

Collector Cutoff Current

VCE= 1400V ; RBE= 0

hFE

DC Current Gain

IC= 1A ; VCE= 5V

tf

Fall Time

ICP= 6.8A , IB1= 1.1A, LB= 0

2SD905

MIN TYP. MAX UNIT

5

V

650

V

10

V

1.5

V

0.5 mA

8

1

μs

SPTECH website：www.superic-tech.com

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