2N7002KA Просмотр технического описания (PDF) - NXP Semiconductors.

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2N7002KA

N-channel TrenchMOS FET

NXP Semiconductors. 

2N7002KA

N-channel TrenchMOS FET

Rev. 03 — 25 February 2008

Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using

TrenchMOS technology.

1.2 Features

I Logic level compatible

I Very fast switching

I Subminiature surface-mounted package I Gate-source ElectroStatic Discharge

(ESD) protection diodes

1.3 Applications

I Relay driver

I High-speed line driver

1.4 Quick reference data

I VDS ≤ 60 V

I RDSon ≤ 4.4 Ω

I ID ≤ 320 mA

I Ptot ≤ 0.83 W

2. Pinning information

Table 1. Pinning

Pin

Description

1

gate (G)

2

source (S)

3

drain (D)

Simplified outline

3

Symbol

D

1

2

G

SOT23 (TO-236AB)

S

003aac036

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