2SB1186F Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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производитель

2SB1186F

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

2SB1186

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0

-120

V

V(BR)CBO Collector-Base Breakdown Voltage

IC= -50μA; IE= 0

-120

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -50μA; IC= 0

-5

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A

-2.0 V

VBE(sat) Base-Emitter Saturation Voltage

IC= -1A; IB= -0.1A

-1.5 V

ICBO

Collector Cutoff Current

VCB= -100V; IE= 0

-1 μA

IEBO

Emitter Cutoff Current

VEB= -4V; IC= 0

-1 μA

hFE

DC Current Gain

IC= -0.1A; VCE= -5V

100

320

COB

Output Capacitance

IE= 0; VCB= -10V; ftest=1MHz

30

pF

fT

Current-Gain—Bandwidth Product

IE= 0.1A; VCE= -5V; ftest= 30MHz

50

MHz

 hFE Classifications

E

F

100-200 160-320

SPTECH website：www.superic-tech.com

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