2SK3018S3 Просмотр технического описания (PDF) - Cystech Electonics Corp.
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2SK3018S3 Datasheet PDF : 8 Pages
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CYStech Electronics Corp.
Typical Characteristics(Cont.)
Spec. No. : C800S3
Issued Date : 2010.07.19
Revised Date : 2013.12.10
Page No. : 4/8
Static Drain-Source On-State Resistance vs Drain Current
100
VGS=2.5V
Ta=25°C
Ta=75°C
10
Ta=125°C
Static Drain-Source On-State Resistance vs Drain Current
10
VGS=4V
Ta=25°C
Ta=75°C
Ta=125°C
1
1
10
100
1000
Drain Current---ID(mA)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
10
9
ID=50mA
8
7
6
5
TA=75°C
4
TA=125°C
3
2
TA=25°C
1
0
0
2
4
6
8
10
Gate-Source Voltage---VGS(V)
Reverse Drain Current vs Source-Drain Voltage(I)
1000
1
1
10
100
1000
Drain Current---ID(mA)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
10
9
8
ID=100mA
7
6
5
TA=75°C
4
TA=125°C
3
2
TA=25°C
1
0
0
2
4
6
8
10
Gate-Source Voltage---VGS(V)
Reverse Drain Current vs Source-Drain Voltage(II)
1000
100
TA=125°C
10
1
TA=25°C
TA=75°C
100
VGS=4V
10
1
VGS=0V
0.1
0
2SK3018S3
0.5
1
Source-Drain Voltage-VSD(V)
0.1
1.5
0
0.5
1
1.5
Source-Drain Voltage-VSD(V)
CYStek Product Specification
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