KTD1898 Просмотр технического описания (PDF) - Galaxy Semi-Conductor
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KTD1898 Datasheet PDF : 4 Pages
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Production specification
Power Transistor
FEATURES
z High VCEO,VCEO=80V.
z High IC,IC=1A(DC).
z Good HFE Linearity.
z Low VCE(sat).
z Complement the 2SB1260.
Pb
Lead-free
KTD1898
APPLICATIONS
z NPN silicon transistor.
ORDERING INFORMATION
Type No.
Marking
KTD1898
DF
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
IC
Collector Current -pulse
PC
Collector Dissipation
Tj,Tstg
Junction and Storage Temperature
Note1:Mounted on ceramic substrate(250mm2*0.8t)
80
V
5
V
1
A
2
A
0.5
W
1
W
-55 to +150
℃
E153
Rev.A
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