Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical W - CDMA Performance — 1800 MHz (In Freescale W - CDMA 1805 - 1880 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc,
IDQ1 = 130 mA, IDQ2 = 330 mA, Pout = 4 W Avg., 1805 - 1880 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 45.2% Clipping,
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
—
33.5
—
dB
Power Added Efficiency
PAE
—
16.5
—
%
Adjacent Channel Power Ratio
ACPR
—
- 50
—
dBc
Input Return Loss
IRL
—
-6
—
dB
Typical GSM EDGE Performance — 1800 MHz (In Freescale GSM EDGE 1805 - 1880 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc,
Pout = 16 W Avg., IDQ1 = 90 mA, IDQ2 = 430 mA, 1805 - 1880 MHz EDGE Modulation
Power Gain
Gps
—
33
—
dB
Power Added Efficiency
PAE
—
35
—
%
Error Vector Magnitude
EVM
—
1.5
—
% rms
Spectral Regrowth at 400 kHz Offset
SR1
—
- 62
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 77
—
dBc
Typical GSM EDGE Performance — 1900 MHz (In Freescale GSM EDGE 1930 - 1990 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc,
Pout = 16 W Avg., IDQ1 = 90 mA, IDQ2 = 430 mA, 1930 - 1990 MHz EDGE Modulation
Power Gain
Gps
—
30
—
dB
Power Added Efficiency
PAE
—
33
—
%
Error Vector Magnitude
EVM
—
1.5
—
% rms
Spectral Regrowth at 400 kHz Offset
SR1
—
- 62
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 80
—
dBc
Typical CW Performance (In Freescale GSM EDGE 1930 - 1990 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 90 mA,
IDQ2 = 430 mA, Pout = 40 W CW, 1805 - 1880 MHz and 1930 - 1990 MHz
Power Gain
Gps
—
31
—
dB
Power Added Efficiency
PAE
—
50
—
%
Input Return Loss
IRL
—
- 15
—
dB
Pout @ 1 dB Compression Point
P1dB
—
45
—
W
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
4
RF Device Data
Freescale Semiconductor