PMPB20EN Просмотр технического описания (PDF) - Nexperia B.V. All rights reserved
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PMPB20EN Datasheet PDF : 15 Pages
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Nexperia
PMPB20EN
30 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min Max
VDS
drain-source voltage
Tj = 25 °C
-
30
VGS
gate-source voltage
-20 20
ID
drain current
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
[1]
-
10.4
VGS = 10 V; Tamb = 25 °C
[1]
-
7.2
VGS = 10 V; Tamb = 100 °C
[1]
-
4.6
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
-
30
Ptot
total power dissipation Tamb = 25 °C
[1]
-
1.7
Tamb = 25 °C; t ≤ 5 s
[1]
-
3.5
Tsp = 25 °C
-
12.5
Tj
junction temperature
-55 150
Tamb
ambient temperature
-55 150
Tstg
storage temperature
-65 150
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
-
2.2
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Unit
V
V
A
A
A
A
W
W
W
°C
°C
°C
A
120
017aaa123
120
017aaa124
Pder
Ider
(%)
(%)
80
80
40
40
0
- 75
- 25
25
75
125
175
Tj (°C)
Fig. 1. Normalized total power dissipation as a
function of junction temperature
0
- 75
- 25
25
75
125
175
Tj (°C)
Fig. 2. Normalized continuous drain current as a
function of junction temperature
PMPB20EN
Product data sheet
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12 July 2018
© Nexperia B.V. 2018. All rights reserved
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