PSMN7R6-60BS Просмотр технического описания (PDF) - Nexperia B.V. All rights reserved
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PSMN7R6-60BS Datasheet PDF : 14 Pages
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PSMN7R6-60BS
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK
Rev. 2 — 2 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS
drain-source voltage
ID
drain current
Ptot
total power dissipation
Tj
junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD
gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 13; see Figure 9
VGS = 10 V; ID = 25 A; VDS = 30 V;
see Figure 15; see Figure 14
VGS = 10 V; ID = 25 A; VDS = 30 V;
see Figure 14; see Figure 15
VGS = 10 V; Tj(init) = 25 °C; ID = 92 A;
Vsup ≤ 100 V; RGS = 50 Ω; unclamped
Min Typ Max Unit
-
-
60 V
-
-
92 A
-
-
149 W
-55 -
175 °C
-
5.9 7.8 mΩ
-
10.6 -
nC
-
38.7 -
nC
-
-
110 mJ
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