2SB1189-Q Просмотр технического описания (PDF) - KEXIN Industrial
Номер в каталоге
Компоненты Описание
производитель
2SB1189-Q Datasheet PDF : 2 Pages
| |||
SMD Type
■ Typical Characterisitics
−1.0
Ta=25°C
−0.8
−10mA
−9mA
−0.6
−0.4
−0.2
−8−m7AmA
−6mA
−5mA
−4mA
−3mA
−2mA
−1mA
0
IB= 0mA
0
−2
−4
−6
−8
−10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Ground emitter output characteristics
Ta=25°C
−0.2
−0.1
IC/IB=20/1
−0.05
IC/IB=10/1
−0.02
−0.01
−1
−5 −10 −20 −50 −100 −200 −500
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs.collector current
PNP Transistors
2SB1189
−50
Ta=25°C
−20
VCE= −6V
−10
−5
−2
−1
−0.5
−0.2
−0.1
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Ground emitter propagation characteristics
Ta=25°C
VCE= −5V
500
200
100
50
20
2
5 10
20
50
EMITTER CURRENT : IE (mA)
Fig.5 Gain bandwidth product vs. emitter current
100
Cib
50
Ta=25°C
f=1MHz
IC=0A
20
10
−0.5 −1
−2
−5 −10 −20
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Emitter input capacitance
vs. emitter-base voltage
−1.0
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
−0.005
−0.002 Ta=25°C
−0.001 ＊Single pulse
−0.1 −0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.8 Safe operating area (2SB1189)
Transistors
Ta=25°C
500
VCE= −5V
200
100
−3V
50
−1V
−1 −2 −5 −10 −20 −50 −100 −200 −500
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs. collector current
Ta=25°C
f=1MHz
100
IE=0A
50
Cob
20
10
−0.5 −1
−2
−5 −10 −20
COLLECTOR TO BASE VOLTAGE : VCE (V)
Fig.6 Collector output capacitance
vs. collector-base voltage
2 www.kexin.com.cn
Share Link: 