MTV10N100E Просмотр технического описания (PDF) - ON Semiconductor

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MTV10N100E

TMOS E−FET Power Field Effect Transistor D3PAK for Surface Mount

ON Semiconductor 

MTV10N100E

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating

Drain−to−Source Voltage

Drain−to−Gate Voltage (RGS = 1.0 MΩ)

Gate−to−Source Voltage — Continuous

Drain Current — Continuous

Drain Current — Continuous @ 100°C

Drain Current — Single Pulse (tp ≤ 10 μs)

Total Power Dissipation

Derate above 25°C

Total Power Dissipation @ TC = 25°C (1)

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche Energy — Starting TJ = 25°C

(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 10 Apk, L = 10 mH, RG = 25 Ω )

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

Thermal Resistance — Junction to Ambient (1)

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

(1) When surface mounted to an FR4 board using the minimum recommended pad size.

Symbol

VDSS

VDGR

VGS

ID

ID

IDM

PD

TJ, Tstg

EAS

RθJC

RθJA

RθJA

TL

Value

1000

1000

±20

10

6.2

30

250

2.0

3.57

−55 to 150

500

0.5

62.5

35

260

Unit

Vdc

Vdc

Vdc

Adc

Apk

Watts

W/°C

Watts

°C

mJ

°C/W

°C

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