EN29F08050S Просмотр технического описания (PDF) - Eon Silicon Solution Inc.

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EN29F08050S

8 Megabit (1024K x 8-bit) Flash Memory

Eon Silicon Solution Inc. 

EN29F080

Table 7. DC Characteristics

(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 5.0V ± 10%)

Symbol

ILI

ILO

Parameter

Input Leakage Current

Output Leakage Current

ICC1

Supply Current (read) TTL Byte

ICC2

ICC3

Supply Current (Standby) TTL

Supply Current (Standby) CMOS

ICC4 Supply Current (Program or Erase)

VIL

VIH

VOL

VOH

VID

IID

VLKO

Input Low Voltage

Input High Voltage

Output Low Voltage

Output High Voltage TTL

Output High Voltage CMOS

A9 Voltage (Electronic Signature)

A9 Current (Electronic Signature)

Supply voltage (Erase and

Program lock-out)

Test Conditions

0V≤ VIN ≤ Vcc

0V≤ VOUT ≤ Vcc

CE = VIL; OE = VIH;

f = 6MHz

CE = VIH

CE = Vcc ± 0.2V

Byte program, Sector or

Chip Erase in progress

IOL = 2 mA

IOH = -2.5 mA

IOH = -100 µA

A9 = VID

Min

Max

Unit

±5

µA

±5

µA

30

mA

1.0

mA

5.0

µA

30

mA

-0.5

0.8

V

2

Vcc ± 0.5 V

0.45

V

2.4

V

Vcc - 0.4V

V

11.0

12.0

V

100

µA

3.2

4.2

V

4800 Great America Parkway, Suite 202

22

Santa Clara, CA 95054

Tel: 408-235-8680

Fax: 408-235-8685

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