EN29F08090T Просмотр технического описания (PDF) - Eon Silicon Solution Inc.

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EN29F08090T

8 Megabit (1024K x 8-bit) Flash Memory

Eon Silicon Solution Inc. 

Table 15. DATA RETENTION

Parameter Description

Minimum Pattern Data Retention Time

EN29F080

Test Conditions

Min

150°C

10

125°C

20

Unit

Years

Years

SWITCHING WAVEFORMS

Figure 6. AC Waveforms for Chip/Sector Erase Operations Timings

Addresses

CE#

OE#

WE#

Data

RY/BY#

Erase Command Sequence (last 2 cycles)

tWC

tAS

tAH

Read Status Data (last two cycles)

0x2AA

SA

VA

VA

0x555 for chip

erase

tGHWL

tCH

tWP

tCS

tWPH

tWHWH2 or tWHWH3

0x55

tDS

tDH

0x30

tBUSY

0x555 for chip

erase

Status

DOUT

tRB

VCC

tVCS

Notes:

1. SA=Sector Address (for sector erase), VA=Valid Address for reading status, Dout=true data at read address.

2. Vcc shown only to illustrate tvcs measurement references. It cannot occur as shown during a valid command

sequence.

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29

Santa Clara, CA 95054

Tel: 408-235-8680

Fax: 408-235-8685

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