EN29F08090T Просмотр технического описания (PDF) - Eon Silicon Solution Inc.

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EN29F08090T

8 Megabit (1024K x 8-bit) Flash Memory

Eon Silicon Solution Inc. 

EN29F080

Figure 10. Alternate CE# Controlled Write Operation Timings

0x555 for Program

0x2AA for Erase

PA for Program

SA for Sector Erase

0x555 for Chip Erase

Addresses

VA

tWC

tAS

tAH

WE#

OE#

CE#

tGHEL

tWS

Data

RY/BY#

tRH

Reset#

tWH

tCP

tCPH

tDS

tDH

0xA0 for Program

0x55 for Erase

tCWHWH1 / tCWHWH2 / tCWHWH3

tBUSY

PD for Program

0x30 for Sector Erase

0x10 for Chip Erase

Status

DOUT

Notes:

PA = address of the memory location to be programmed.

PD = data to be programmed at byte address.

VA = Valid Address for reading program or erase status

Dout = array data read at VA

Shown above are the last two cycles of the program or erase command sequence and the last staus read cycle

Reset# shown to illustrate tRH measurement references. It cannot occur as shown during a valid command

sequence.

4800 Great America Parkway, Suite 202

33

Santa Clara, CA 95054

Tel: 408-235-8680

Fax: 408-235-8685

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