HYB3164805BJ-50 Просмотр технического описания (PDF) - Siemens AG

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Компоненты Описание

производитель

HYB3164805BJ-50

8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)

Siemens AG 

HYB3164(5)805BJ/BT(L)-40/-50/-60

8M x 8-DRAM

P-SOJ-32-1 (400 mil)

P-TSOPII-32-1 (400 mil)

VCC

I/O1

I/O2

I/O3

I/O4

N.C.

VCC

WE

R. AS

A0

A1

A2

A3

A4

A5

VCC

O

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

32 VSS

31 I/O8

30 I/O7

29 I/O6

28 I/O5

27 VSS

26 CAS

25 OE

24 A12 / N.C. *

23 A11

22 A10

21 A9

20 A8

19 A7

18 A6

17 VSS

* Pin 24 is A12 for HYB 3164805BJ/BT(L) and N.C. for HYB 3165805BJ/BT(L)

Pin Configuration

Pin Names

A0-A12

A0-A11

RAS

OE

I/O1-I/O8

CAS

WE

Vcc

Vss

Address Inputs for 8k-refresh version HYB 3164805BJ/BT(L)

Address Inputs for 4k-refresh version HYB 3165805BJ/BT(L)

Row Address Strobe

Output Enable

Data Input/Output

Column Address Strobe

Read/Write Input

Power Supply ( + 3.3V)

Ground

Semiconductor Group

3

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