LTC4372HDD Просмотр технического описания (PDF) - Analog Devices
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LTC4372HDD Datasheet PDF : 20 Pages
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LTC4372/LTC4373
ORDER INFORMATION
TUBE
TAPE AND REEL
PART MARKING*
PACKAGE DESCRIPTION
TEMPERATURE RANGE
LTC4372CDD#PBF
LTC4372CDD#TRPBF LHGR
8-Lead (3mm × 3mm) Plastic DFN
0°C to 70°C
LTC4372IDD#PBF
LTC4372IDD#TRPBF
LHGR
8-Lead (3mm × 3mm) Plastic DFN
–40°C to 85°C
LTC4372HDD#PBF
LTC4372HDD#TRPBF LHGR
8-Lead (3mm × 3mm) Plastic DFN
–40°C to 125°C
LTC4372CMS8#PBF
LTC4372CMS8#TRPBF LTHGS
8-Lead Plastic MSOP
0°C to 70°C
LTC4372IMS8#PBF
LTC4372IMS8#TRPBF LTHGS
8-Lead Plastic MSOP
–40°C to 85°C
LTC4372HMS8#PBF
LTC4372HMS8#TRPBF LTHGS
8-Lead Plastic MSOP
–40°C to 125°C
LTC4373CDD#PBF
LTC4373CDD#TRPBF LHMQ
8-Lead (3mm × 3mm) Plastic DFN
0°C to 70°C
LTC4373IDD#PBF
LTC4373IDD#TRPBF
LHMQ
8-Lead (3mm × 3mm) Plastic DFN
–40°C to 85°C
LTC4373HDD#PBF
LTC4373HDD#TRPBF LHMQ
8-Lead (3mm × 3mm) Plastic DFN
–40°C to 125°C
LTC4373CMS8#PBF
LTC4373CMS8#TRPBF LTHMR
8-Lead Plastic MSOP
0°C to 70°C
LTC4373IMS8#PBF
LTC4373IMS8#TRPBF LTHMR
8-Lead Plastic MSOP
–40°C to 85°C
LTC4373HMS8#PBF
LTC4373HMS8#TRPBF LTHMR
8-Lead Plastic MSOP
–40°C to 125°C
Contact the factory for parts specified with wider operating temperature ranges.
Tape and reel specifications. Some packages are available in 500 unit reels through designated sales channels with #TRMPBF suffix.
ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. IN = SOURCE =12V, SHDN = 0V, UV = 2V unless otherwise noted.
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNITS
VIN
VIN(UVL)
∆VIN(HYST)
Input Supply Voltage Range
Input Supply Undervoltage Lockout
IN Rising
Input Supply Undervoltage Lockout Hysteresis
l 2.5
80
V
l 1.9
2.1 2.45
V
80
mV
VINTVCC
IQ
Internal Regulator Voltage
Total Supply Current
IQ = IIN + ISOURCE + IOUT
IINTVCC = 0 to –10µA
l 2.5
3.5
4.5
V
Diode Control: IGATE = –0.1µA
Single or Back-to-Back MOSFETs (Note 4)
(C-Grade, I-Grade)
l
(H-Grade)
l
5
10
µA
5
20
µA
Shutdown: SHDN = 2V, UV = 0V
Single MOSFET
Back-to-Back MOSFETs
l
3.5
10
µA
l
0.5
2.5
µA
Reverse Current: ∆VSD = –0.1V, IN = 12V
Single MOSFET
l
Back-to-Back MOSFETs
l
20
30
µA
10
20
µA
IOUT
OUT Current
IN – OUT = 4V
IN – OUT = –4V
l
–0.5 –10
µA
l
1.8
5
µA
INEG
IN + SOURCE Current During
Reverse Battery
IN = SOURCE = –24V, OUT = 24V
l
–1
–5
mA
IOUT(NEG)
∆VSD(T)
∆VGATE(H)
OUT Current During Reverse Battery
Source-Drain Threshold (IN-OUT)
Maximum GATE Drive (GATE-SOURCE)
IGATE(UP) GATE Pull-Up Current
IN = SOURCE = –24V, OUT = 24V
Low to High. Activates IGATE(UP)
IN ≤ 5V, ∆VSD = 0.1V, IGATE = 0, –1µA
IN > 5V, ∆VSD = 0.1V, IGATE = 0, –1µA
GATE = IN, ∆VSD = 0.1V
l
0.3
0.5
mA
l 20
30
45
mV
l 4.5
6.5
10
V
l 10 11.7 16
V
l –15 –20 –25
µA
Rev. 0
For more information www.analog.com
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