CEU02N65G Просмотр технического описания (PDF) - Chino-Excel Technology
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CEU02N65G Datasheet PDF : 4 Pages
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CED02N65G/CEU02N65G
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
650
VDS = 650V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
V
1
µA
100 nA
-100 nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
2
VGS = 10V, ID = 0.9A
4
V
4.4 5.5
Ω
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
295
75
pF
pF
Crss
20
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID = 1A,
VGS = 10V, RGEN = 18Ω
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 480V, ID = 1A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
19
38
ns
11
22
ns
29
58
ns
10
20
ns
6.7 8.9 nC
1.5
nC
3
nC
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b
VSD
VGS = 0V, IS = 1A
1.8
A
1.5
V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Device Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
e.L = 10mH, IAS =1.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
2
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