32NM50N Просмотр технического описания (PDF) - STMicroelectronics
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32NM50N Datasheet PDF : 21 Pages
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Electrical characteristics
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
(VGS = 0)
IDSS
Zero gate voltage
drain current (VGS = 0)
IGSS
Gate-body leakage
current (VDS = 0)
VGS(th) Gate threshold voltage
RDS(on)
Static drain-source
on-resistance
Test conditions
Value
Unit
Min. Typ. Max.
ID = 1 mA
500
V
VDS = 500 V
VDS = 500 V, TC = 125 °C
1 µA
100 µA
VGS = ± 25 V
±100 nA
VDS = VGS, ID = 250 µA
2
3
4
V
VGS = 10 V, ID = 11 A
0.1 0.13 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
Coss
(1)
eq.
Equivalent output
capacitance
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Rg Gate input resistance
VDS = 50 V, f = 1 MHz,
VGS = 0
1973
pF
- 179 -
pF
9.7
pF
VGS = 0, VDS = 0 to 400 V -
325
-
pF
VDD =250 V, ID = 11 A
RG = 4.7 Ω, VGS = 10 V
(see Figure 23),
(see Figure 18)
21.5
ns
9.5
ns
-
-
110
ns
23.6
ns
VDD = 400 V, ID = 22 A,
VGS = 10 V,
(see Figure 19)
62.5
nC
-
8.6
-
nC
33
nC
f=1MHz Gate DC Bias=0
Test signal level=20 mV
-
3.8
-
Ω
Open drain
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/21
Doc ID 023436 Rev 1
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