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SI4599DY-T1-GE3 Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге
Компоненты Описание
производитель
SI4599DY-T1-GE3
Vishay
Vishay Semiconductors 
SI4599DY-T1-GE3 Datasheet PDF : 15 Pages
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New Product
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
Si4599DY
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10-4
1
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 120 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
Duty Cycle = 0.5
0.2
0.1 0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 68971
S-82619-Rev. A, 03-Nov-08
www.vishay.com
7

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