PJM3018NSA Просмотр технического описания (PDF) - Unspecified
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PJM3018NSA Datasheet PDF : 6 Pages
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PJM3018NSA
N- Enhancement Mode Field Effect Transistor
Features
◆ Surface Mount Package
◆ Low RDS(ON)
◆ ESD protected(HBM) up to 2KV
SOT-23
Applications
◆ Switching Application
1.Gate 2.Source 3.Drain
Marking: 3018K
D
G
S
Absolute Maximum Ratings
(TC=25℃, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Note1
Power Dissipation
Junction Temperature
Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient Note1
Symbol
VDS
VGS
ID
PD
TJ
TSTG
Symbol
RθJA
Value
30
±20
0.1
0.35
150
-55 to 150
Typ.
357
Unit
V
V
A
W
°C
°C
Units
°C/W
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Revision：1.0 Nov-2018
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