DMTH4005SPSQ-13 Просмотр технического описания (PDF) - Diodes Incorporated.
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DMTH4005SPSQ-13 Datasheet PDF : 7 Pages
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6)
Continuous Drain Current (Notes 7 & 10)
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.6mH
Avalanche Energy, L=0.6mH
TA = +25°C
TA = +70°C
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
DMTH4005SPSQ
Value
Unit
40
V
±20
V
20.9
17.5
A
100
100
A
100
A
150
A
21
A
132.3
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA= +25°C
TC = +25°C
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
2.6
57
150
1
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min Typ Max
BVDSS
40
—
—
IDSS
——
1
IGSS
— — ±100
VGS(TH)
2
—
4
RDS(ON)
—
2.9
3.7
VSD
— 0.88 —
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
— 3,062 —
— 902.2 —
— 179.2 —
— 0.67 —
— 49.1 —
— 10.3 —
— 13 —
— 8.7 —
— 6.8 —
— 18.6 —
— 7.3 —
— 31.8 —
— 26.5 —
Unit
Test Condition
V
VGS = 0V, ID = 1mA
μA VDS = 32V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V
VDS = VGS, ID = 250μA
mΩ VGS = 10V, ID = 50A
V
VGS = 0V, IS = 50A
pF
VDS = 20V, VGS = 0V,
f = 1MHz
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC VDD = 20V, ID = 50A,
VGS = 10V
ns
VDD = 20V, VGS = 10V,
ID = 50A, RG = 3Ω
ns
IF = 50A, di/dt = 100A/μs
nC
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
10. Package limited.
DMTH4005SPSQ
Document number: DS38159 Rev.1 - 2
2 of 7
www.diodes.com
November 2015
© Diodes Incorporated
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