CDBU0230-N Просмотр технического описания (PDF) - ComChip

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CDBU0230-N

SMD Schottky Barrier Diode

ComChip 

SMD Schottky Barrier Diode

CDBU0230-N(Lead-free Device)

Io = 200 mA

VR = 30 Volt s

Features

SMD Diodes Specialist

Designed for mounting on small surface.

Extremely thin/leadless package.

Low drop-down voltage.

Majority carrier conduction.

Mechanical data

0603(1608)

0.071(1.80)

0.063(1.60)

0.035(0.90)

0.029(0.75)

Case: 0603 (1608) Standard package ,

molded plastic.

Terminals: Gold plated, solderable per

MIL-STD-750, method 2026.

Polarity: Indicated by cathode band

Mounting position: Any.

Weight: 0.003 gram (approx.).

0.014(0.35) Typ.

0.033(0.85)

0.027(0.70)

0.012 (0.30) Typ.

0.028(0.70) Typ.

Dimensions in inches and (millimeter)

Maximum

Rating

(at

O

TA=25 C

unless

otherwise

noted)

Parameter

Repetitive peak reverse voltage

Reverse voltage

Average forward current

Conditions

Symbol Min Typ Max Unit

VRRM

35

V

VR

30

V

IO

200 mA

Forward current,surge peak

8.3ms single half sine-wave superimposed

on rate load(JEDEC method)

IFSM

2000

mA

Power Dissipation

Storage temperature

Junction temperature

PD

TSTG

-40

Tj

150 mW

+125

O

C

+125

O

C

Electrical

Characteristics

(at

O

TA=25 C

unless

otherwise

noted)

Parameter

Conditions

Forward voltage

IF = 200 mADC

Reverse current

VR = 30 V

Capacitance between terminals f = 1 MH Z,and 10VDC reverse voltage

Symbol Min Typ Max Unit

VF

0.50 V

IR

30

uA

CT

9

PF

QW-A1050

REV:B

Page 1

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