BTC2383A3 Просмотр технического описания (PDF) - Cystech Electonics Corp.
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BTC2383A3 Datasheet PDF : 9 Pages
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CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTC2383A3
Spec. No. : C316
Issued Date : 2005.12.21
Revised Date : 2006.03.17
Page No. : 1/9
Features
• High breakdown voltage, BVCEO≥ 200V
• Large continuous collector current capability
• Low collector saturation voltage
• Complementary to BTA1013A3
• Pb-free package
Symbol
BTC2383A3
Outline
TO-92
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
Pd
Tj
Tstg
BTC2383A3
ECB
Limits
Unit
280
V
200
V
6
V
1
A
0.5
A
900
mW
150
°C
-55~+150
°C
CYStek Product Specification
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