2SA673ADTZ-E Просмотр технического описания (PDF) - Renesas Electronics

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Компоненты Описание

производитель

2SA673ADTZ-E

Silicon PNP Epitaxial

Renesas Electronics 

2SA673, 2SA673A

Preliminary

Electrical Characteristics

Item

Collector to base

breakdown voltage

Collector to emitter

breakdown voltage

Emitter to base

breakdown voltage

Collector cutoff current

Collector to emitter

saturation voltage

DC current transfer ratio

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

VCE(sat)

hFE*1

2SA673

Min Typ Max

–35 —

—

–35 —

—

–4

—

—

—

— –0.5

— –0.2 –0.6

60

— 320

2SA673A

Min Typ Max

–50 —

—

–50 —

—

–4

—

—

—

— –0.5

— –0.2 –0.6

60

— 320

DC current transfer ratio

hFE

10

—

—

10

—

—

Base to emitter voltage

VBE

— –0.64 —

— –0.64 —

Notes: 1. The 2SA673 and 2SA673A are grouped by hFE as follows.

2. Pulse test

B

C

D

60 to 120 100 to 200 160 to 320

(Ta = 25°C)

Unit

Test conditions

V IC = –10 μA, IE = 0

V IC = –1 mA, RBE = ∞

V IE = –10 μA, IC = 0

μA VCB = –20 V, IE = 0

V IC = –150 mA,

IB = –15 mA*2

VCE = –3 V,

IC = –10 mA

VCE = –3 V,

IC = –500 mA*2

V VCE = –3 V,

IC =–10 mA

R07DS0429EJ0300 Rev.3.00

Jun 07, 2011

Page 2 of 4

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