2N5550S Просмотр технического описания (PDF) - Unspecified
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2N5550S Datasheet PDF : 5 Pages
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SEMICONDUCTOR
TECHNICAL DATA
2N5550S
2N5551S
High Voltage Transistors
FEATURE
Pb-Free package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
2N5550S
F0
3000/Tape&Reel
2N5551S
F1
3000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
mitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value
140
160
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
TJ , Tstg
Max
225
1.8
556
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C = 1.0 mAdc, I B =0)
Collector–Base Breakdown Voltage
(I C = 100 µAdc, IE =0)
Emitter–Base Breakdown Voltage
(I E = 10µAdc, IC = 0)
Collector Cutoff Current
( VCB = 100Vdc, IE = 0)
( VCB = 120Vdc, IE = 0)
( VCB = 100Vdc, IE = 0, TA=100 °C)
( VCB = 120Vdc, IE = 0, TA=100 °C)
Emitter Cutoff Current
( VBE = 4.0Vdc, I C= 0)
2N5550S
2N5551S
2N5550S
2N5551S
2N5550S
2N5551S
2N5550S
2N5551S
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2.0%.
V (BR)CEO
140
160
V (BR)CBO
160
160
V (BR)EBO
6.0
I CBO
_
_
_
_
I EBO
_
Max
_
_
_
_
_
100
50
100
50
50
2011. 01. 12
Revision No : 2
3
1
2
SOT–23
1
BASE
3
COLLECTOR
2
EMITTER
Unit
Vdc
Vdc
Vdc
nAdc
µAdc
nAdc
1/5
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