BDT86(2012) Просмотр технического описания (PDF) - Comset Semiconductors

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Компоненты Описание

производитель

BDT86
(Rev.:2012)

SILICON POWER TRANSISTORS

Comset Semiconductors 

PNP BDT82 – BDT84 – BDT86 – BDT88

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

IS/B

Second breakdown

collector current

fT

Transition frequency

ton

Turn-on time

Toff

Turn-off time

Test Condition(s)Sec

Min Typ Max Unit

VCE= -50 V, tP = 100 ms

-2.5 -

VCE= -10 V, IC= -0.5 A, f=1 MHz

-

20

IC= -7 A

-

-

IB1 = -IB2 = -0.7 A

-

-

-

A

- MHz

1

2

µs

(*) Pulse Duration = 300 µs, δ <= 2%

09/11/2012

COMSET SEMICONDUCTORS

3|4

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