BDX66C_ Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

BDX66C_

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ; IB=0;L=25mH

VCEsat

ICBO

ICEO

Collector-emitter saturation voltage IC=-10A ;IB=-40mA

Collector cut-off current

VCB=-70V; IE=0

TC=150℃

Collector cut-off current

VCE=-60V; IB=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

Switching times

ton

Turn-on time

toff

Turn-off time

IC=-10A ;

IB1=-IB2=0.04A

VCC=12V ;

Product Specification

BDX66C

MIN TYP. MAX UNIT

-120

V

-2

V

-1

-5

mA

-3

mA

-5

mA

1.0

μs

3.5

μs

2

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